| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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650 pcs
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650 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The APT1001R1BN from Microsemi Corporation is a high voltage N-Channel Enhancement Mode Power MOSFET. This component is designed for demanding applications requiring high voltage and current handling capabilities.
Key electrical specifications include a maximum Drain-Source On-Resistance (Rds(on)) of 1.1 Ohms at a gate-source voltage of 10V and a drain current of 5.3A. The device boasts a high Drain-Source Breakdown Voltage of 1000V and a Continuous Drain Current rating of 10.5A at 25°C, with a pulsed drain current capability of 44A. The gate-source voltage is rated up to ±30V, with a threshold voltage ranging from 2V to 4V. Input capacitance is a maximum of 4nF.
Thermal performance is supported by a maximum power dissipation of 310W and an operating temperature range of -55°C to 150°C. The MOSFET is packaged in a TO-247AD through-hole package, featuring 3 pins plus a tab for enhanced thermal management.
This power MOSFET is suitable for various industrial automation and process automation applications where robust high-voltage switching is required.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 150°C.
TO-247AD with through-hole mounting and 3 pins plus tab.
The minimum drain-source breakdown voltage is 1000V.
The maximum continuous drain current is 10.5A at 25°C.
The maximum on-resistance is 1.1Ω at a gate-source voltage of 10V and drain current of 5.3A.
The maximum power dissipation is 310W.
The gate-source threshold voltage ranges from 2V to 4V.