| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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644 pcs
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644 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
455 pcs
|
455 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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| Tape & Reel |
The Kingbright APA3010P3BT-GX is an NPN silicon phototransistor housed in a compact 3.0 x 2.0 x 1.0 mm right-angle SMD package with a 1.0 mm thickness. This component features a blue transparent lens and is mechanically and spectrally matched to infrared emitting LED lamps.
Key electrical and optical characteristics include a collector-emitter breakdown voltage of 30V, a collector-emitter saturation voltage of 0.8V maximum, and a collector dark current of 100nA maximum. The device has a peak sensitivity wavelength of 940nm and a spectral bandwidth ranging from 670nm to 1070nm. The angle of half sensitivity is typically 160 degrees.
This phototransistor is supplied on tape and reel, with 2000 pieces per reel. It has tinned pads for improved solderability and is RoHS compliant and halogen-free. The operating temperature range is -40°C to +85°C.
Applications for the APA3010P3BT-GX include infrared applied systems, optoelectronic switches, photodetector control circuits, and sensor technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage is 30V at IC = 100µA.
It is a 3.0 x 2.0 x 1.0mm right-angle SMD package with a blue transparent lens.
The operating and storage temperature ranges are both -40 to +85°C.
The typical peak wavelength sensitivity is 940nm.
Typical rise and fall times are 15µs each at VCE = 5V, IC = 1mA.
The maximum collector dark current is 100nA at VCE = 10V.
On-state collector current is minimum 0.1mA and typical 0.3mA at VCE = 5V with 940nm irradiation.