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AP9938GEO-HF The APEC AP9938GEO-HF is a dual N-channel enhancement mode power MOSFET designed for optimal DC/DC battery applications. It offers low on-resistance and 1.8V gate drive capability.
Mfr Part #:

AP9938GEO-HF

Available from 1 distributors
Mfr Name: APEC
APEC
The APEC AP9938GEO-HF is a dual N-channel enhancement mode power MOSFET designed for optimal DC/DC battery applications. It offers low on-resistance and 1.8V gate drive capability.
✓ Total Stock: 11,169 pcs
$ Price Range: $2.40

AP9938GEO-HF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
11,169 pcs
On Request
11169 pcs On Request 1 On Request On Request 16+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

AP9938GEO-HF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Input Capacitance
Reverse Recovery Time
SVHC Present
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AP9938GEO-HF Description

Short technical summary and product information.

The APEC AP9938GEO-HF is a dual N-channel enhancement mode power MOSFET. It is designed to provide a balance of fast switching, rugged device design, ultra-low on-resistance, and cost-effectiveness, making it suitable for DC/DC battery applications.

 

Key electrical characteristics include a Drain-Source Breakdown Voltage (BVDSS) of 20V. The Static Drain-Source On-Resistance (RDS(ON)) is rated at a maximum of 18mΩ at 6A with a 4.5V gate drive, 24mΩ at 4A with a 2.5V gate drive, and 28mΩ at 2A with a 1.8V gate drive. The Gate Threshold Voltage (VGS(th)) ranges from 0.3V to 1V.

 

This MOSFET features a typical continuous drain current of 6A at 25°C and 4.8A at 70°C, with a pulsed drain current of up to 20A. The operating junction temperature range is -55°C to 150°C. It is supplied in a TSSOP-8 package.

 

The device is Halogen-Free and RoHS Compliant.

AP9938GEO-HF Quick Information

Product Type: MOSFET
Series: AP9938
Canonical Name: APEC AP9938GEO-HF Dual N-Channel Enhancement Mode Power MOSFET
Subcategory: Dual N-Channel

AP9938GEO-HF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

AP9938GEO-HF Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

AP9938GEO-HF Features

  • Dual N-channel enhancement mode MOSFET.
  • Low on-resistance: 18mΩ maximum.
  • Capable of 1.8V gate drive.
  • Optimal for DC/DC battery applications.
  • Halogen Free and RoHS Compliant.

AP9938GEO-HF Applications

  • Power management in portable devices.
  • DC-DC converter circuits.
  • Load switching applications.
  • Battery protection circuits.

AP9938GEO-HF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the AP9938GEO-HF?

20V minimum at VGS=0V, ID=250µA.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is the AP9938GEO-HF available in?

TSSOP-8 package.

What is the on-resistance at 4.5V gate drive?

18mΩ maximum at VGS=4.5V, ID=6A.

What is the continuous drain current rating?

6A at TA=25°C, 4.8A at TA=70°C.

What is the gate threshold voltage range?

0.3V to 1V at VDS=VGS, ID=250µA.

What is the total gate charge?

16nC to 26nC at ID=6A.

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