| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,821 pcs
|
1821 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | 07+48 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Spacing | |
| Lead Style | |
| Power Dissipation | |
| SVHC Present | |
| Type |
The AP4435GM is a P Channel MOSFET from APEC, designed for various electronic applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 9A at 25°C. The gate threshold voltage is typically 3V at 250µA, with a maximum on-resistance of 20 mΩ at 7A and 10V.
This MOSFET is housed in a SOIC-8 (150 mil) package, suitable for surface-mount applications. Its maximum power dissipation is rated at 2.5W. The P Channel configuration makes it suitable for specific switching and amplification tasks in power management circuits.
APEC is known for providing cost-effective semiconductor solutions. The AP4435GM is part of their MOSFET offerings, designed to meet the demands of modern electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage of the AP4435GM is 30V.
The continuous drain current for the AP4435GM at 25°C is 9A.
The gate threshold voltage of the AP4435GM is 3V at 250µA.
The maximum on-resistance of the AP4435GM is 20 mΩ at 7A and 10V.
The AP4435GM MOSFET is supplied in a SOIC-8 (150 mil) package.
The AP4435GM is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the AP4435GM is Level 1.