| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,279 pcs
|
11279 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
4,811 pcs
|
4811 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,281 pcs
|
2281 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation | |
| Type |
The AP4435GM is a P Channel MOSFET manufactured by APEC, optimized for high-performance and low-voltage applications. This component features a Drain Source Voltage (Vdss) of 30V and a Continuous Drain Current (Id) of 9A.
Key electrical characteristics include a Drain Source On Resistance (RDS(on)) of 20mΩ at 10V/7A and a Gate Threshold Voltage (Vgs(th)) of 3V at 250uA. The device has a Power Dissipation (Pd) rating of 2.5W.
Packaged in a SOIC-8 case, the AP4435GM is suitable for various electronic designs requiring a reliable P Channel MOSFET. Its specifications make it a versatile component for power management and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain Source Voltage is 30V.
The Continuous Drain Current is 9A.
The Drain Source On Resistance is 20mΩ at 10V/7A.
The Gate Threshold Voltage is 3V at 250uA.
The AP4435GM is a P Channel MOSFET.
The AP4435GM is supplied in a SOIC-8 package.