| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,137 pcs
|
16137 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Reverse Recovery Time |
The AP02N90J is a programmable unijunction transistor manufactured by APAC. It features a drain-source breakdown voltage of 900V and a maximum RDS(ON) of 7.2Ω, making it suitable for high-voltage switching and power applications. The device has a gate threshold voltage of 2V (typical) and 4V (maximum), with a forward transconductance of 2S. It supports a continuous drain current of 1.9A at 25°C and 1.2A at 100°C, with a pulsed drain current of 18A. The device is packaged in TO-251(J) and TO-252(H) through-hole packages, designed for through-hole mounting. It operates within a junction temperature range of -55°C to 150°C and has a maximum junction-case thermal resistance of 2°C/W. The device also features a reverse recovery time of 360ns and a reverse recovery charge of 1.8µC.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (BVDSS) is 900V.
The device is available in TO-251(J) and TO-252(H) packages.
The maximum continuous drain current at 25°C is 1.9A.
The maximum junction temperature is 150°C.