| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,075 pcs
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4075 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AOWF7S65 is an N-Channel power MOSFET from Alpha & Omega Semiconductor, fabricated using the advanced aMOS™ high voltage process. It features a drain-source voltage rating of 650V (750V typical at 150°C) and a continuous drain current of 7A at 25°C case temperature. The maximum on-resistance is 0.65Ω at Vgs=10V and Id=3.5A, with a typical value of 0.54Ω.
Electrical characteristics include a gate charge of 9.2 nC (max) and input capacitance of 434 pF, enabling efficient switching in power conversion applications. The device is avalanche rated with a single pulse avalanche energy of 86 mJ and repetitive avalanche energy of 43 mJ. It also offers 100% UIS and Rg testing for ruggedness.
The MOSFET is housed in a TO-262F through-hole package with a junction-to-case thermal resistance of 5°C/W. It operates over a junction temperature range of -55°C to 150°C. The part is RoHS compliant and has an MSL rating of 1 (unlimited).
650V
7A at Tc=25°C
0.65Ω maximum at Vgs=10V, Id=3.5A, Tj=25°C
TO-262F (through-hole)
-55°C to 150°C (junction)
Yes, RoHS3 compliant (unverified)
9.2 nC maximum at Vgs=10V, Vds=480V, Id=3.5A