| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,489 pcs
|
3489 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The AOS AOV20S60 is a high-voltage N-channel MOSFET utilizing the advanced αMOS™ high voltage process. It is designed to deliver high levels of performance and robustness in switching applications.
Key electrical specifications include a 600V drain-source voltage, a continuous drain current of 18A at 25°C, and a maximum power dissipation of 278W at 25°C. The MOSFET offers a typical static drain-source on-resistance of 0.25Ω at 10A and 10V gate-source voltage, along with a typical gate charge of 20nC.
This device is fabricated using a process that provides low RDS(on), Qg, and EOSS, along with guaranteed avalanche capability. It is suitable for adoption into new and existing offline power supply designs.
The AOV20S60 comes in a DFN8x8-4L surface-mount package. Its thermal characteristics include a maximum junction-to-case thermal resistance of 0.35°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The continuous drain current is 18A at 25°C.
The typical static drain-source on-resistance is 0.25Ω.
The typical gate charge is 20nC.
The AOV20S60 is available in a DFN8x8-4L package.
The status is 'Not for New Designs'.