BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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8,807 pcs
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8807 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The AOU4S60 is an N-channel MOSFET manufactured by AOS, designed for high-voltage switching applications. It operates with a maximum drain-source voltage of 600V and a continuous drain current of 4A at 25°C.
Key electrical characteristics include a typical gate threshold voltage of 3.5V, a maximum on-resistance (Rds(on)) of 900mΩ at Vgs=10V, and a typical gate charge (Qg) of 6nC. The device also features a maximum junction temperature of 150°C and a low thermal resistance from junction to case of 2.2°C/W.
Packaged in a TO-251 surface-mount package, the AOU4S60 is suitable for various power supply designs. Its advanced aMOSTM high voltage process ensures performance and robustness in switching applications, offering guaranteed avalanche capability.
Applications include offline power supplies and other switching circuits requiring high voltage handling capabilities.
| Qty | Low | High |
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| 1+ | $2.30 | $2.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the AOU4S60 is 600V.
The continuous drain current of the AOU4S60 is 4A at 25°C.
The typical gate threshold voltage for the AOU4S60 is 3.5V.
The maximum on-resistance (Rds(on)) for the AOU4S60 is 900mΩ at Vgs=10V.
The typical gate charge (Qg) for the AOU4S60 is 6nC.
The operating temperature range for the AOU4S60 is -55°C to 150°C.
The AOU4S60 is available in a TO-251 package.