| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,835 pcs
|
2835 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| Manufacturer Name | |
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| Power Dissipation |
The AOS AOU4N60 is a 600V, 4A N-Channel MOSFET fabricated using an advanced high voltage process. It is designed to deliver high performance and robustness in popular AC-DC applications.
Key electrical characteristics include a maximum drain-source voltage of 600V and a continuous drain current of 4A at 25°C. The device features a low static drain-source on-resistance of 2.3W at VGS=10V, ID=2A, and a gate threshold voltage typically around 4.1V. It also offers guaranteed avalanche capability, with a single pulsed avalanche energy of 235mJ.
This MOSFET is suitable for various applications, including power supplies. It comes in a TO-251 package, designed for through-hole mounting.
The AOU4N60 is part of AOS's high voltage MOSFET series, providing a balance of performance and reliability for demanding power conversion designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the AOU4N60 is 600V.
The continuous drain current of the AOU4N60 at 25°C is 4A.
The typical gate threshold voltage for the AOU4N60 is 4.1V.
The maximum static drain-source on-resistance is 2.3W at VGS=10V, ID=2A.
The AOU4N60 is available in a TO-251 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.