| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,440 pcs
|
3440 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The AOS AOU2N60 is an N-Channel MOSFET designed for AC-DC power supply applications. It features a 600V drain-source voltage and a continuous drain current of 2A at 25°C.
Key electrical characteristics include a low on-resistance (RDS(ON)) of typically 3.6W at VGS=10V and a gate threshold voltage (VGS(th)) ranging from 3V to 4.5V. The MOSFET also offers guaranteed avalanche capability.
Packaged in a TO-251 surface-mount package, the AOU2N60 is suitable for designs requiring compact solutions. Its thermal characteristics include a maximum junction-to-case thermal resistance of 2.2°C/W.
This obsolete part was fabricated using an advanced high voltage MOSFET process, designed to deliver high levels of performance and robustness.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-251, surface mount.
-50 to 150°C.
2A at TC=25°C; 1.4A at TC=100°C.
Minimum 3V, typical 4V, maximum 4.5V.
56.8W at TC=25°C.
Single pulsed avalanche energy 120mJ and repetitive avalanche energy 56.8mJ.