TLV431BLPRMG
On Semiconductor
The TLV431BLPRMG is an adjustable shunt voltage reference IC from On Semiconductor. It offers a precise output voltage with a tolerance of ±0.5%.
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6,821 pcs
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6821 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The AOTF5N50FD is an N-Channel MOSFET manufactured by AOS, designed for high-performance AC-DC applications. It offers a Drain-Source Voltage (VDS) of 500V and a continuous Drain Current (ID) of 5A at 100°C.
Key electrical characteristics include a low Static Drain-Source On-Resistance (RDS(ON)) of 1.8W at VGS=10V, and a Gate Threshold Voltage (VGS(th)) typically around 3.5V. The device also incorporates a fast recovery body diode with a reverse recovery time (trr) as low as 87ns.
This MOSFET is fabricated using an advanced high voltage process, providing low RDS(on), Ciss, and Crss, along with guaranteed avalanche capability. It is well-suited for integration into new and existing offline power supply designs.
The AOTF5N50FD is supplied in a TO-220F package, designed for through-hole mounting. Its robust design and specifications make it a reliable choice for various industrial and consumer power applications.
| Qty | Low | High |
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| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the AOTF5N50FD is 500V.
The AOTF5N50FD has a continuous drain current rating of 5A at 100°C and 3A at 25°C.
The typical Gate Threshold Voltage (VGS(th)) for the AOTF5N50FD is 3.5V.
The maximum Static Drain-Source On-Resistance (RDS(ON)) is 1.8W at VGS=10V and ID=2.5A.
The AOTF5N50FD comes in a TO-220F package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
