| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,100 pcs
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7100 pcs | On Request | 1 | On Request | On Request | 2020+ | On Request | On Request |
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The AOTF5N50 from AOS is an N-Channel MOSFET rated for 500V drain-source voltage and 5A continuous drain current. Fabricated using an advanced high voltage MOSFET process, it is designed for robustness and high performance in popular AC-DC applications.
Key electrical characteristics include a low typical on-resistance of 1.5Ω at VGS=10V and a gate threshold voltage ranging from 3.5V to 4.5V. The device also offers guaranteed avalanche capability, with a typical total gate charge of 19nC.
The MOSFET is housed in a TO-220F package, suitable for through-hole mounting. Its thermal characteristics include a maximum power dissipation of 35W at 25°C and a maximum junction temperature of 150°C.
The AOTF5N50 is suitable for various applications including automotive, cloud computing, consumer electronics, and industrial power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the AOTF5N50 is 500V.
The continuous drain current rating for the AOTF5N50 is 5A at 25°C.
The typical on-resistance of the AOTF5N50 is 1.5Ω at VGS=10V and ID=2.5A.
The AOTF5N50 is available in a TO-220F package.
The maximum operating junction temperature for the AOTF5N50 is 150°C.
The RoHS status is RoHS3 Compliant.