| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,705 pcs
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6705 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The AOS AOTF454L is a 150V N-Channel MOSFET that combines advanced trench technology with a low-resistance package, providing extremely low RDS(ON). This device is suitable for applications such as boost converters and synchronous rectifiers in consumer, telecom, and industrial power supplies, as well as LED backlighting.
Key electrical characteristics include a Drain-Source Breakdown Voltage of 150V and a typical Gate Threshold Voltage of 4V. The on-resistance is rated at a maximum of 94mΩ at VGS=10V and 110mΩ at VGS=7V. Continuous drain current is 13A at 25°C and 8A at 100°C.
Thermal performance is supported by a maximum junction-to-case thermal resistance of 2.4°C/W. The MOSFET operates within a junction and storage temperature range of -55 to 150°C. It is packaged in a TO220F package, suitable for through-hole mounting.
This MOSFET is ideal for power supply designs requiring efficient voltage conversion and regulation. Its robust construction and specified performance parameters make it a reliable choice for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 150V.
The device is packaged in a TO220F through-hole package.
The junction and storage temperature range is -55°C to 150°C.
The continuous drain current is 13A at case temperature 25°C, and 8A at 100°C.
The maximum on-resistance is 94mΩ at VGS=10V, and 110mΩ at VGS=7V.
The gate threshold voltage ranges from 3.4V (minimum) to 4.6V (maximum), with a typical value of 4V.
The maximum power dissipation is 41W at case temperature 25°C, and 2.1W at ambient temperature 25°C.