| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,232 pcs
|
2232 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation |
The AOS AOTF42S60L is a high-performance N-channel Power MOSFET fabricated using the advanced αMOSTM high voltage process. It is designed to deliver high levels of performance and robustness in switching applications.
Key electrical specifications include a 600V Drain-Source Breakdown Voltage (VDS) and a 39A Continuous Drain Current (ID) at 25°C. The on-resistance (RDS(ON)) is a maximum of 0.099 Ohms at VGS=10V and ID=21A, with a typical gate charge (Qg) of 40nC. The device also features a 166A pulsed drain current and avalanche capability.
This MOSFET is housed in a TO-220F package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to 150°C, with a maximum junction-to-case thermal resistance of 0.3°C/W.
The AOTF42S60L is suitable for various offline power supply designs requiring low on-resistance and guaranteed avalanche capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 600V minimum at ID=250µA and VGS=0V.
The junction temperature range is from -55°C to 150°C.
The device comes in a TO-220F through-hole package.
The continuous drain current is 39A at TC=25°C, limited by maximum junction temperature.
The maximum on-resistance is 0.099Ω at VGS=10V and ID=21A.
The gate threshold voltage is typically 3.2V, with a range of 2.5V to 3.8V at VDS=5V and ID=250µA.
The typical gate charge is 40nC at VGS=10V and ID=21A.