| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,162 pcs
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7162 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AOS AOTF20S60L is a high voltage N-channel MOSFET designed for switching applications. It features a 600V drain-source voltage rating and a continuous drain current of 20A at 25°C.
Key electrical characteristics include a maximum on-resistance of 530mΩ at 10V gate-source voltage and a typical gate charge of 19.8nC. The MOSFET also exhibits typical input capacitance (Ciss) of 1038pF and output capacitance (Coss) of 68pF, with a reverse transfer capacitance (Crss) of 2.1pF. Switching performance is supported by a typical turn-on delay of 27.5ns and turn-off delay of 87.5ns, along with a reverse recovery time (Trr) of 350ns.
This device is housed in a TO-220F package, suitable for through-hole mounting. It operates within a junction and storage temperature range of -55°C to 150°C, with a maximum junction temperature of 150°C.
The AOTF20S60L is fabricated using advanced aMOS™ high voltage process technology, designed for high performance and robustness in offline power supply designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-220F.
-55°C to 150°C.
20A at case temperature 25°C.
530mΩ at VGS=10V.
Typically 3.4V.
37.8W at case temperature 25°C.