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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AOS AOTF20N60 is an N-Channel MOSFET built using an advanced high-voltage process, delivering robust performance for AC-DC applications. It offers a Drain-Source Voltage of 600V and a continuous Drain Current of 20A at 25°C.
Key electrical characteristics include a low Static Drain-Source On-Resistance of 0.37W maximum at VGS=10V and a Gate Threshold Voltage typically around 3.8V. The MOSFET also provides essential dynamic parameters such as Turn-On Delay Time of 57ns and Turn-Off Delay Time of 128ns.
Packaged in a TO-220F through-hole configuration, the AOTF20N60 is suitable for industrial power supply designs. Its thermal characteristics include a maximum junction-to-case thermal resistance of 2.5°C/W, supporting efficient heat dissipation.
This MOSFET is designed for reliability and performance in demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the AOTF20N60 is 600V.
The continuous drain current for the AOTF20N60 is 20A at 25°C.
The typical Gate Threshold Voltage for the AOTF20N60 is 3.8V.
The AOTF20N60 is available in a TO-220F package.
The RoHS status of the AOTF20N60 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the AOTF20N60 is Level 1.