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28 pcs
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28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AOS AOTF18N65L is a 650V, 18A N-Channel MOSFET designed for high-performance AC-DC applications. It features a low on-resistance (RDS(on)) of less than 0.39W at VGS=10V and ID=9A, along with guaranteed avalanche capability.
This MOSFET is fabricated using an advanced high voltage process, offering robustness and efficiency. Key electrical characteristics include a gate threshold voltage between 2.9V and 4.5V, and a continuous drain current of 18A at 25°C case temperature.
The component is supplied in a TO-220F package, suitable for through-hole mounting. Its thermal resistance junction-to-ambient is 65°C/W, and junction-to-case is 2.5°C/W.
The AOTF18N65L is tested 100% for UIS and Rg, ensuring reliability in demanding power supply designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650V.
The continuous drain current is 18A at 25°C case temperature.
The typical on-resistance is 0.32W at VGS=10V and ID=9A.
The AOTF18N65L is available in a TO-220F package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.