| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,069 pcs
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4069 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,440 pcs
|
1440 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The AOS AOTF18N65 is an N-Channel MOSFET featuring a 650V drain-source voltage and a continuous drain current of 18A at 25°C. Fabricated using an advanced high-voltage MOSFET process, this component is designed for high performance and robustness in popular AC-DC applications.
Key electrical characteristics include a low static drain-source on-resistance of typically 0.32W at VGS=10V, ID=9A, and a gate threshold voltage ranging from 2.9V to 4.5V. The MOSFET also provides guaranteed avalanche capability, with a single pulsed avalanche energy of 1190mJ.
Packaged in a TO-220F through-hole configuration, the AOTF18N65 is suitable for various industrial power supply and motor drive applications. Its robust design and performance metrics make it a reliable choice for new and existing offline power supply designs.
This part has a maximum junction temperature of 150°C and a maximum junction-to-ambient thermal resistance of 65°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650V.
The continuous drain current is 18A at 25°C.
The typical static drain-source on-resistance is 0.32W at VGS=10V, ID=9A.
The package type is TO-220F.
The maximum junction temperature is 150°C.