| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,005 pcs
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3005 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present | |
| Tape & Reel |
The AOT9N50 is an N-Channel MOSFET from AOS, rated for 500V and 9A continuous drain current. Fabricated using an advanced high voltage MOSFET process, it is designed for robust performance in popular AC-DC applications.
Key electrical characteristics include a low on-resistance (RDS(ON) max of 0.85W at VGS=10V) and a gate threshold voltage typically around 4V. The device features a maximum junction temperature of 150°C and a power dissipation of 192W at 25°C.
This MOSFET is housed in a TO-220 package, suitable for through-hole mounting. Its design provides low RDS(on), Ciss, and Crss, along with guaranteed avalanche capability, making it suitable for quick adoption into new and existing offline power supply designs.
Applications include automotive, cloud computing, consumer electronics, and industrial power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the AOT9N50 is 500V.
The continuous drain current of the AOT9N50 at 25°C is 9A.
The maximum on-resistance for the AOT9N50 is 0.85W at a gate-source voltage of 10V and a drain current of 4.5A.
The typical gate threshold voltage of the AOT9N50 is 4V.
The maximum junction temperature for the AOT9N50 is 150°C.
The AOT9N50 is available in the TO-220 package.