| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
350 pcs
|
350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The AONR36366 is an N-Channel enhancement mode MOSFET from Alpha & Omega Semiconductor, built with advanced MOSFET technology. It is designed for high-efficiency power management applications.
Key electrical specifications include a drain-source voltage (Vdss) of 30V, continuous drain current of 30A at ambient temperature (Ta=25°C) and 34A at case temperature (Tc=25°C). The device features a low maximum on-resistance of 3.5mOhm at Vgs=10V and Id=20A, minimizing conduction losses. Gate charge is 35nC at Vgs=10V, and input capacitance is 1835pF at Vds=15V, enabling efficient switching. The gate threshold voltage is 2.1V maximum, and the recommended drive voltages are 4.5V and 10V.
The MOSFET is rated for a maximum power dissipation of 5W at Ta=25°C and 28W at Tc=25°C. It operates over a junction temperature range of -55°C to 150°C. The device is housed in a compact 8-PowerVDFN package with a supplier package of 8-DFN-EP (3x3mm), suitable for surface mount assembly.
Reliability data from the manufacturer indicates a FIT rate of 3.82 per billion hours and a MTTF of 29919 years at Tuse=55°C and Ea=0.7eV. The product is RoHS3 compliant and REACH unaffected, with MSL Level 1 (unlimited) verified.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.04 | $1.04 |
| 10+ | $0.65 | $0.65 |
| 50+ | $0.48 | $0.48 |
| 100+ | $0.42 | $0.42 |
| 500+ | $0.32 | $0.32 |
| 5,000+ | $0.24 | $0.24 |
| 15,000+ | $0.21 | $0.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 30 V.
The continuous drain current is 30 A at Ta=25°C and 34 A at Tc=25°C.
The maximum drain-source on-resistance is 3.5 mOhm at Vgs=10V and Id=20A.
The maximum gate charge is 35 nC at Vgs=10V.
The package is 8-PowerVDFN, with supplier device package 8-DFN-EP (3x3).
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified.