| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Continuous Drain Current (Maximum @ TA=25 °C, Q 2) | |
| Continuous Drain Current (Maximum @ TC=25 °C, Q 1) | |
| Continuous Drain Current (Maximum @ TC=25 °C, Q 2) | |
| Current | |
| Diode Forward Voltage (Q1) | |
| Drain Source On Resistance (Maximum @ VGS=10 V, ID=34 A, Q 2) | |
| Drain Source On Resistance (Maximum @ VGS=4.5 V, ID=15 A, Q 1) | |
| Drain Source On Resistance (Maximum @ VGS=4.5 V, ID=20 A, Q 2) | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Fall Time (Q1) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Threshold Voltage (Minimum/Typical/Maximum @ VDS=VGS, ID=250 µA, Q 2) | |
| Gate-Source Voltage | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Input Capacitance (Typical @ VDS=12.5 V, VGS=0 V, f=1 MHz, Q 2) | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Typical @ VDS=12.5 V, VGS=0 V, f=1 MHz, Q 1) | |
| Output Capacitance (Typical @ VDS=12.5 V, VGS=0 V, f=1 MHz, Q 2) | |
| Power | |
| Power Dissipation (Maximum @ TA=25 °C, Q 2) | |
| Power Dissipation (Maximum @ TC=25 °C, Q 1) | |
| Power Dissipation (Maximum @ TC=25 °C, Q 2) | |
| Pulsed Drain Current (Maximum @ Q 1) | |
| Pulsed Drain Current (Maximum @ Q 2) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Transfer Capacitance (Typical @ VDS=12.5 V, VGS=0 V, f=1 MHz, Q 1) | |
| Reverse Transfer Capacitance (Typical @ VDS=12.5 V, VGS=0 V, f=1 MHz, Q 2) | |
| Rise Time (Q1) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape and Reel | |
| Technology | |
| Thermal Resistance Junction To Ambient (Maximum @ Steady State, Q 1) | |
| Thermal Resistance Junction To Ambient (Maximum @ Steady State, Q 2) | |
| Thermal Resistance Junction To Case (Maximum @ Steady State, Q 1) | |
| Thermal Resistance Junction To Case (Maximum @ Steady State, Q 2) | |
| Total Gate Charge (Maximum @ VGS=10 V, VDS=12.5 V, ID=34 A, Q 2) | |
| Turn-Off Delay Time (Q1) | |
| Turn-On Delay Time (Q1) | |
| Vgs(th) (Max) @ Id |
The AONE36132 is a dual asymmetric N-Channel MOSFET designed for compact power conversion. It integrates two MOSFETs with different current ratings: Q1 supports 17A continuous drain current at VGS=10V and Q2 supports 34A, while both are rated for a maximum drain-source voltage of 25V. The device features very low on-resistance, with RDS(ON) as low as 4.6mΩ for Q1 at VGS=10V and 1.4mΩ for Q2 at the same gate drive.
The AONE36132 is well-suited for DC/DC converters in PCs, servers, and point-of-load converters. The asymmetric configuration allows designers to optimize efficiency and board space by selecting different channel ratings for high-side and low-side switches. The device is 100% UIS and Rg tested, ensuring ruggedness for demanding applications.
The MOSFET is offered in a compact DFN3.3x3.3A package (8-DFN-EP) with exposed pad for improved thermal performance. It is surface-mount compatible and available in tape and reel packaging. The operating junction temperature range is -55°C to 150°C, and the device is RoHS and halogen-free compliant.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.83 | $0.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 25V for both MOSFETs.
The AONE36132 is available in a DFN3.3x3.3A surface-mount package (8-DFN-EP).
The operating junction temperature range is -55°C to 150°C.
Yes, the AONE36132 is RoHS compliant and halogen-free.
Q1 supports 17A continuous drain current at TA=25°C, while Q2 supports 34A. At TC=25°C, both can handle 60A.
The maximum RDS(on) for Q1 is 4.6mΩ at VGS=10V and ID=17A, and for Q2 is 1.4mΩ at VGS=10V and ID=34A.