| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,260 pcs
|
1260 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The AON7611 is a complementary MOSFET from Alpha & Omega Semiconductor, integrating an N-channel and a P-channel MOSFET in a single DFN 3x3 EP package. It is designed for inverter and other applications that benefit from having both channel types in one device.
The N-channel side has a maximum drain-source voltage of 30V and supports 9A continuous drain current at 25°C, or 20A pulsed. The P-channel side has a maximum drain-source voltage of -30V and supports -18.5A continuous drain current at 25°C, or -35A pulsed. Both channels share a ±20V gate-source voltage rating.
The device uses advanced trench technology to provide excellent on-resistance and low gate charge. Each MOSFET is 100% UIS tested and 100% Rg tested. Maximum power dissipation at 25°C is 7W for the N-channel and 20.8W for the P-channel, and the junction-to-ambient thermal resistance is 50°C/W maximum for a 10-second pulse.
The AON7611 is supplied in a DFN 3x3 EP package with exposed pad for surface-mount assembly. It operates over a junction temperature range of -55°C to 150°C. This complementary MOSFET array is suitable for power conversion and inverter stages where both high-side and low-side switches are needed.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
| 10+ | $0.61 | $0.61 |
| 50+ | $0.45 | $0.45 |
| 100+ | $0.40 | $0.40 |
| 500+ | $0.31 | $0.31 |
| 5,000+ | $0.22 | $0.22 |
| 15,000+ | $0.20 | $0.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-channel MOSFET has a maximum drain-source voltage of 30V, and the P-channel MOSFET has a maximum drain-source voltage of -30V.
At 25°C, the N-channel supports 9A continuous drain current, and the P-channel supports -18.5A continuous drain current.
The N-channel pulsed drain current is 20A, and the P-channel pulsed drain current is -35A.
Both channels have a maximum gate-source voltage rating of ±20V.
The AON7611 is available in a DFN 3x3 EP package with 8 leads.
The junction and storage temperature range is -55°C to 150°C.