| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,514 pcs
|
7514 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
5,415 pcs
|
5415 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Tape & Reel |
The AOS AON7423 is a P-Channel MOSFET with a Drain-Source Voltage (VDS) of -20V. It offers a low On-State Resistance (RDS(ON)) of 5mΩ at a Gate-Source Voltage (VGS) of -4.5V, and up to 6.5mΩ at -2.5V. The continuous drain current (ID) is rated at -50A at 25°C and -39A at 100°C.
This MOSFET is designed using advanced trench technology for low resistance and is suitable for load switch and battery protection applications. It has a maximum power dissipation of 83W at 25°C.
The AON7423 is housed in a DFN3.3x3.3-8L surface-mount package. Its thermal characteristics include a junction-to-case resistance of 1.1°C/W and a junction-to-ambient resistance of 55°C/W.
Key electrical parameters include a Gate Threshold Voltage (VGS(th)) typically -0.5V, input capacitance (Ciss) of 5626pF, and output capacitance (Coss) of 928pF. The device also features a typical turn-on delay time of 18ns and turn-off delay time of 285ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage (BVDSS) is -20V.
The maximum Gate-Source Voltage (VGS) is ±8V.
The typical Gate Threshold Voltage (VGS(th)) is -0.5V.
The maximum RDS(ON) at VGS = -4.5V is 5mΩ.
The continuous drain current (ID) at 25°C is -50A.
The maximum power dissipation (PD) at 25°C is 83W.
The operating temperature range is -55°C to 150°C.