| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,100 pcs
|
17100 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The AOS AON7422E is a 30V N-Channel MOSFET utilizing advanced trench technology for low on-resistance. It is suitable for load switch and battery protection applications.
Key electrical characteristics include a Drain-Source Voltage (VDS) of 30V and a maximum continuous drain current (ID) of 40A at 25°C. The on-resistance (RDS(ON)) is rated at a maximum of 4.3mΩ at VGS=10V and 4.5V ID=16A. The gate threshold voltage (VGS(th)) typically ranges from 1.3V to 2.4V.
Dynamic parameters include a typical turn-on delay time (tD(on)) of 7ns and a turn-off delay time (tD(off)) of 41.5ns. Capacitance values such as input capacitance (Ciss) are 2445pF, output capacitance (Coss) are 390pF, and reverse transfer capacitance (Crss) are 220pF.
This MOSFET is housed in a DFN3x3A-8L surface mount package. It operates within a junction and storage temperature range of -55°C to 150°C. Thermal resistance from junction to case (RθJC) is 2.8°C/W, and junction to ambient (RθJA) is 75°C/W at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the AON7422E is 30V.
The typical On-Resistance (RDS(ON)) at VGS=10V is less than 4.3mΩ.
The typical On-Resistance (RDS(ON)) at VGS=4.5V is less than 6.0mΩ.
The Gate Threshold Voltage (VGS(th)) ranges from a minimum of 1.3V to a maximum of 2.4V, with a typical value of 1.85V.
The maximum continuous drain current (ID) is 40A at 25°C.
The AON7422E is in a DFN3x3A-8L surface mount package.
The junction and storage temperature range is -55°C to 150°C.