| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,625 pcs
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3625 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AON7403L is a P-Channel enhancement mode MOSFET from Alpha & Omega Semiconductors. It features a drain-source voltage rating of 30V and a continuous drain current of 8A at ambient temperature (Ta=25°C) or 20A at case temperature (Tc=25°C). The device offers a low on-resistance of 18mΩ maximum at Vgs=10V and Id=8A, enabling efficient power switching. The gate threshold voltage is 3V maximum at Id=250µA, and the gate charge is 24nC at Vgs=10V. Input capacitance is 1400pF at Vds=15V. The MOSFET is designed for surface mount assembly in an 8-PowerVDFN package with exposed pad (8-DFN-EP 3x3mm). It operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 1.6W at ambient temperature and 27W at case temperature. The device is suitable for load switching, power management, and battery protection applications where low on-resistance and compact footprint are required.
The drain-source voltage (Vdss) is 30V.
8A at ambient temperature (Ta=25°C) and 20A at case temperature (Tc=25°C).
Maximum on-resistance is 18mΩ at Vgs=10V and Id=8A.
The junction temperature range is -55°C to 150°C.
It comes in an 8-PowerVDFN surface mount package (8-DFN-EP 3x3mm).
It is listed as RoHS3 compliant, but this is unverified.
Maximum gate threshold voltage is 3V at Id=250µA.