| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,300 pcs
|
2300 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request | |
|
1,515 pcs
|
1515 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Tape & Reel |
The AON7403 is a P-Channel MOSFET from Alpha and Omega Semiconductor (AOS) with a 30V drain-source voltage rating. It utilizes advanced trench technology to achieve excellent on-resistance (RDS(ON)) and low gate charge, making it suitable for load switch and PWM applications.
Key electrical specifications include a maximum continuous drain current of -29A at 25°C and a low RDS(ON) of less than 18mΩ at VGS=-10V. The gate threshold voltage typically ranges from -1.7V to -3V. Dynamic parameters such as input capacitance (Ciss) are 1130pF, output capacitance (Coss) are 240pF, and reverse transfer capacitance (Crss) are 155pF.
This MOSFET features a junction-to-ambient thermal resistance (RθJA) of 47°C/W, allowing for efficient heat dissipation. It operates within a junction and storage temperature range of -55°C to 150°C. The device is supplied in a DFN3x3A-8L surface-mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (BVDSS) is -30V.
The maximum continuous drain current (ID) is -29A at 25°C.
The typical on-resistance (RDS(ON)) is 18mΩ at VGS=-10V and ID=-8A.
The gate threshold voltage (VGS(th)) ranges from -1.7V to -3V, with a typical value of -2.2V.
The AON7403 is supplied in a DFN3x3A-8L package.
The junction and storage temperature range is -55°C to 150°C.