| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
222 pcs
|
222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The AON7403 is a P-Channel enhancement-mode MOSFET fabricated using advanced trench technology. It is designed for applications requiring efficient power management, such as load switching and PWM circuits. With a drain-source voltage rating of 30V and a continuous drain current of 29A (at Tc=25°C), it provides robust performance in a compact DFN package. The device features a low typical on-resistance of 14mΩ at Vgs=-10V, minimizing conduction losses. It also offers a gate threshold voltage of -2.2V typical, allowing drive at 5V logic levels. The MOSFET has a maximum power dissipation of 25W at case temperature 25°C. It operates over a junction temperature range of -55°C to 150°C. The package is 8-DFN-EP (3x3mm) with exposed pad for improved thermal management. This device is RoHS3 compliant and has an MSL of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.15 | $0.15 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AON7403 has a maximum drain-source voltage (Vds) of 30V.
The AON7403 is available in an 8-PowerVDFN (8-DFN-EP 3x3mm) surface mount package.
The AON7403 can operate over a junction temperature range from -55°C to 150°C.
The AON7403 is listed as RoHS3 compliant, though this is unverified.
The typical on-resistance is 14mΩ at Vgs=-10V and 26mΩ at Vgs=-5V.
The total gate charge (Qg) is 18nC typical, 24nC maximum at Vgs=15V.