| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,463 pcs
|
1463 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The AON7264E is a 60V N-Channel MOSFET based on AlphaSGT trench technology. Key electrical specifications include a maximum drain-source voltage of 60V, continuous drain current of 28A at Tc=25°C, and low on-resistance of 9.5mΩ (max) at Vgs=10V / Id=17A. The gate threshold voltage is 2.4V (max) at Id=250µA. This device also features a typical gate charge of 14.5nC at 10V.
Switching performance is characterized by typical turn-on delay of 6.5ns, rise time of 3.5ns, turn-off delay of 22ns, and fall time of 3ns. The body diode has a typical forward voltage of 0.72V and a reverse recovery time of 19ns. Avalanche energy is rated at 43mJ (L=0.3mH).
The AON7264E is housed in an 8-PowerVDFN (DFN 3x3 EP) surface mount package with an exposed pad for efficient thermal management. Power dissipation is 27.5W at Tc=25°C. The junction operating temperature range is -55°C to 150°C. This device is suitable for high-efficiency power supplies and secondary synchronous rectification.
| Qty | Low | High |
|---|---|---|
| 5,000+ | $0.30 | $0.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AON7264E has a maximum drain-source voltage of 60V.
The AON7264E is available in an 8-PowerVDFN (DFN 3x3 EP) surface mount package.
The junction operating temperature range is -55°C to 150°C.
The AON7264E is listed as RoHS3 compliant, but this status is unverified.
The maximum continuous drain current is 28A at Tc=25°C.
The typical total gate charge is 14.5nC at Vgs=10V, Vds=30V, Id=17A.
The maximum on-resistance is 13.3mΩ at Vgs=4.5V, Id=15A.