| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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493 pcs
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493 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
328 pcs
|
328 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The AOS AON6970 is a 30V dual asymmetric N-channel MOSFET designed with the latest Trench Power AlphaMOS (αMOS LV) technology. This component offers very low RDS(on) at 4.5VGS and high current capability, making it suitable for demanding applications.
Key electrical characteristics include a Drain-Source Voltage (VDS) of 30V and a maximum continuous drain current (ID) of up to 85A at 25°C. The on-resistance (RDS(ON)) is notably low, measuring less than 1.5mΩ at VGS=10V for one channel and less than 5.4mΩ for the other. It also features low gate charge.
This MOSFET is packaged in a DFN5x6-8L surface-mount package. Its design is optimized for DC/DC converters in computing, servers, and POL applications, as well as isolated DC/DC converters in telecom and industrial sectors. The part is RoHS and Halogen-Free compliant.
Note: This part is marked as obsolete by the manufacturer, with AONY36352 suggested as a replacement.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The package is DFN5x6-8L.
The junction and storage temperature range is -55°C to 150°C.
The maximum continuous drain current is 85A at 25°C case temperature.
The maximum static drain-source on-resistance is 1.5mΩ at VGS=10V and ID=85A.
The typical gate threshold voltage is 1.8V.
The maximum power dissipation is 78W at 25°C case temperature.