| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,470 pcs
|
1470 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The AON6926 is a 30V dual N-channel MOSFET from Alpha & Omega Semiconductor, configured as a half bridge with two asymmetric MOSFETs in a single 8-DFN (5x6) package. The Q1 high-side MOSFET is optimized for low switching losses, while the Q2 low-side MOSFET (SRFET) features an integrated Schottky diode and low Rds(on) to minimize conduction losses.
Key electrical specifications include a drain-source voltage rating of 30V, continuous drain currents of 44A (Q1) and 50A (Q2) at 25°C, and pulsed drain currents up to 100A (Q1) and 140A (Q2). The maximum Rds(on) is 11mΩ for Q1 and 8.5mΩ for Q2 at Vgs=10V, with logic-level gate threshold voltages (1.5V min, 2.5V max). Gate charge is 24nC maximum, and input capacitance is 1380pF maximum.
The device is surface-mount and operates over a junction temperature range of -55°C to 150°C. It is suitable for compact DC/DC converter applications, particularly synchronous buck converters where high efficiency and board space utilization are critical.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.45 | $0.45 |
| 6,000+ | $0.43 | $0.43 |
| 9,000+ | $0.41 | $0.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 150°C (junction).
8-DFN (5x6) (PowerVDFN).
Yes, RoHS3 Compliant (unverified).
30V.
1.5V minimum, 2V typical, 2.5V maximum at V_GS=V_DS, I_D=250µA.
Q1: 44A at T_A=25°C; Q2: 50A at T_A=25°C.
1380 pF maximum at V_DS=15V, f=1MHz.