| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
175,000 pcs
|
175000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The AON6516 is an N-Channel enhancement-mode MOSFET from Alpha & Omega Semiconductor Inc., built on the latest Trench Power AlphaMOS (αMOS LV) technology. It is designed for high-efficiency power conversion applications.
Key electrical characteristics include a drain-source voltage (VDS) of 30V, continuous drain current of 32A at case temperature 25°C, and a typical on-resistance of 5mΩ at VGS=10V. The device also offers low gate charge (24nC typical at 10V) and fast switching speeds.
The AON6516 is housed in a compact 8-DFN (5x6mm) surface-mount package with flat leads, suitable for space-constrained designs. It is RoHS and Halogen-Free compliant.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.21 | $0.21 |
| 6,000+ | $0.20 | $0.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (VDS) is 30V.
The continuous drain current is 32A at case temperature 25°C and 27A at ambient temperature 25°C.
The typical on-resistance is 5mΩ at VGS=10V and ID=20A, and 6.4mΩ at VGS=4.5V and ID=20A.
The junction temperature range is -55°C to 150°C.
The AON6516 is available in an 8-DFN (5x6mm) surface-mount package with flat leads.
Yes, the AON6516 is RoHS3 compliant and Halogen-Free compliant.