| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,890 pcs
|
2890 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The AON6510 is an N-Channel MOSFET from Alpha & Omega Semiconductor, utilizing Trench Power AlphaMOS (αMOS LV) technology. It is designed for high-efficiency power conversion applications. Key electrical specifications include a drain-source breakdown voltage of 30V, continuous drain current of 32A at case temperature 25°C (28A at ambient), and a maximum drain-source on-resistance of 4.4mΩ at VGS=10V and ID=20A. The device features low gate charge (42nC max at 10V) and fast switching characteristics with typical turn-on delay of 8ns and rise time of 4ns. It is housed in a compact 8-PowerSMD flat lead package (DFN5x6) suitable for surface mount assembly. The MOSFET is RoHS and Halogen-Free compliant, and 100% UIS and Rg tested. Typical applications include DC/DC converters in computing, servers, and point-of-load (POL) regulators, as well as isolated DC/DC converters in telecom and industrial systems.
30V minimum.
8-PowerSMD flat leads (DFN5x6).
-55°C to 150°C junction temperature.
Yes, RoHS3 compliant.
4.4mΩ maximum at VGS=10V, ID=20A.
42nC maximum at VGS=10V.
32A at case temperature 25°C, 28A at ambient 25°C.