| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,655 pcs
|
2655 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Tape & Reel |
The AOS AON6508 is an N-Channel AlphaMOS (αMOS LV) MOSFET with a Drain-Source Voltage (VDS) of 30V. It is engineered with the latest Trench Power AlphaMOS technology, offering very low RDS(ON) at both 4.5VGS (5mΩ typical) and 10VGS (3.2mΩ typical). This MOSFET boasts high current capability, making it suitable for applications requiring efficient power handling.
The AON6508 is designed for DC/DC converters in computing, servers, and POL applications, as well as isolated DC/DC converters in telecom and industrial sectors. It features a low gate charge and is 100% UIS and Rg tested. The component is supplied in a DFN5x6 package, suitable for surface mounting.
Key electrical characteristics include a Gate Threshold Voltage (VGS(th)) ranging from 1.4V to 2.2V, a continuous drain current of up to 32A at 25°C, and a maximum power dissipation of 41W at 25°C case temperature. The part is also RoHS and Halogen-Free compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.76 | $1.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the AON6508 is 30V.
The typical RDS(ON) of the AON6508 at VGS=10V is less than 3.2mΩ.
The typical RDS(ON) of the AON6508 at VGS=4.5V is less than 5mΩ.
The maximum continuous drain current for the AON6508 at 25°C is 32A.
The AON6508 MOSFET is supplied in a DFN5x6 package.
The AON6508 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the AON6508 is 1 Unlimited.