| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,188 pcs
|
3188 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | 2026-06-03 16:15:09 | |
|
2,618 pcs
|
2618 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
1,357 pcs
|
1357 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Mounting Type | |
| Operating Temperature | |
| Storage Temperature | |
| Tape & Reel | |
| Technology |
The AON6414AL is a P-Channel MOSFET designed for high efficiency and fast switching in surface mount applications. It offers a 20V drain-source voltage (Vdss) and supports continuous drain currents of 47A at ambient temperature and 85A at case temperature.
Key electrical characteristics include a low on-resistance of 2.1mOhm at 20A and 10V, a gate threshold voltage of 1.3V at 250µA, and a maximum gate-source voltage of ±12V. The device has a significant input capacitance of 10290pF at 10V and a gate charge of 330nC at 10V, contributing to robust switching performance.
This MOSFET operates within a junction temperature range of -55°C to +150°C. It is housed in an 8-DFN (5x6 mm) package, designed for surface mounting with flat leads that enhance thermal performance and current carrying capability. The construction allows for high current and power handling in a compact footprint, with power dissipation rated at 7.3W (Ta) and 156W (Tc).
The AON6414AL is suitable for applications requiring high current capacity and efficiency. Its low on-resistance minimizes voltage drop and self-heating, making it a reliable component for demanding power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.50 | $1.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the AON6414AL is 20V.
At 25°C, the continuous drain current (Id) is 47A for ambient temperature (Ta) and 85A for case temperature (Tc).
The maximum on-resistance (Rds(on)) is 2.1mOhm when measured at 20A and 10V.
The gate threshold voltage (Vgs(th)) is a maximum of 1.3V at 250µA.
The input capacitance (Ciss) is a maximum of 10290pF at 10V.
The operating junction temperature range is from -55°C to +150°C.
The AON6414AL is a P-Channel MOSFET.