AON6413 P-Channel MOSFET with 30V drain-source breakdown voltage, continuous drain current of 22A (Ta) and 32A (Tc), and low on-resistance of 8.5mΩ at 10V. Surface mount in 8-DFN package.
Mfr Part #:

AON6413

Available from 1 distributors
Mfr Name: Alpha&Omega Semicondu Ctor
Alpha&Omega Semicondu Ctor
P-Channel MOSFET with 30V drain-source breakdown voltage, continuous drain current of 22A (Ta) and 32A (Tc), and low on-resistance of 8.5mΩ at 10V. Surface mount in 8-DFN package.
✓ Total Stock: 12,000 pcs

AON6413 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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12,000 pcs
12000 pcs On Request 1 On Request On Request 1905+ On Request On Request

AON6413 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

AON6413 Description

Short technical summary and product information.

The AON6413 is a P-Channel MOSFET from Alpha & Omega Semiconductor, utilizing advanced Trench Power MOSFET technology. It features a drain-source breakdown voltage of -30V and a continuous drain current rating of -32A at Tc=25°C and -22A at Ta=25°C. The device offers very low on-resistance: typically 6.9mΩ (max 8.5mΩ) at Vgs=-10V and Id=-16A, and typically 12.9mΩ (max 17mΩ) at Vgs=-4.5V and Id=-10A.

 

Key electrical characteristics include a gate threshold voltage range of -1.6V to -2.7V, input capacitance of 2142pF, and total gate charge of 41nC typical at Vgs=-10V. The device is designed for efficient switching with fast switching times: turn-on delay 13ns, rise time 12ns, turn-off delay 34ns, fall time 18.5ns. It also features a body diode with reverse recovery time of 17.5ns.

 

The AON6413 is housed in an 8-PowerSMD package with flat leads (8-DFN 5x6mm) and is surface mountable. It is RoHS and Halogen-Free compliant. Typical applications include system/load switching and battery switch applications. The device is 100% UIS and Rg tested, ensuring reliability.

AON6413 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: AON6413 P-Channel MOSFET
Subcategory: P-Channel MOSFET

AON6413 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

AON6413 Features

  • P-Channel MOSFET with -30V drain-source voltage.
  • Low on-resistance of 8.5mΩ at 10V gate drive.
  • High continuous drain current up to -32A.
  • Fast switching with 13ns turn-on delay.
  • RoHS and Halogen-Free compliant.

AON6413 Applications

  • Ideal for system and load switching applications.
  • Used in battery switch circuits.
  • Suitable for power management in portable devices.
  • Applicable in DC-DC converter designs.

AON6413 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the AON6413?

The drain-source breakdown voltage is -30V (minimum).

What package does the AON6413 come in?

The AON6413 is available in an 8-PowerSMD package with flat leads, also known as 8-DFN (5x6mm).

What is the operating temperature range of the AON6413?

The operating junction temperature range is -55°C to 150°C.

Is the AON6413 RoHS compliant?

Yes, the AON6413 is RoHS3 compliant.

What is the on-resistance of the AON6413?

The typical on-resistance is 6.9mΩ (max 8.5mΩ) at Vgs=-10V and Id=-16A, and 12.9mΩ (max 17mΩ) at Vgs=-4.5V and Id=-10A.

What is the continuous drain current rating of the AON6413?

The maximum continuous drain current is -32A at Tc=25°C and -22A at Ta=25°C.

What is the gate threshold voltage of the AON6413?

The gate threshold voltage ranges from -1.6V (minimum) to -2.7V (maximum), with a typical value of -2.1V at Id=-250µA.

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