| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,100 pcs
|
11100 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,712 pcs
|
1712 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The AON6411 from Alpha and Omega Semiconductor is a 20V P-Channel MOSFET that combines advanced trench technology with a low-resistance package. This configuration provides extremely low on-state resistance (RDS(ON)), making it suitable for demanding applications.
Key electrical characteristics include a Drain-Source Breakdown Voltage of -20V and a Continuous Drain Current of -85A at 25°C. The RDS(ON) is as low as 2.1mΩ at VGS=-10V. The device features a Gate Threshold Voltage typically around -0.85V.
Designed for efficiency and performance, the AON6411 is ideal for load switch and battery protection applications. It is housed in a compact DFN5x6-8L surface-mount package, facilitating integration into various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.55 | $0.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage is -20V.
The maximum Gate-Source Voltage is ±12V.
The Continuous Drain Current is -85A at 25°C.
The typical RDS(ON) is 2.1mΩ at VGS=-10V.
The typical Gate Threshold Voltage is -0.85V.
The Junction and Storage Temperature Range is -55 to 150°C.
The AON6411 is available in a DFN5x6-8L package.