| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,825 pcs
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3825 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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| Tape & Reel |
The AON6408L is a high-performance N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. This component is designed for various electronic applications requiring efficient power switching.
Key electrical specifications include a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 14.5A at 25°C ambient temperature, and 25A at 25°C case temperature. The on-resistance (Rds On) is specified as a maximum of 6.5 mOhm at 20A and 10V gate-source voltage. The gate charge (Qg) is 36nC at 10V, and the input capacitance (Ciss) is 1900pF at 15V.
The MOSFET has a maximum power dissipation of 2.4W and a gate-source threshold voltage (Vgs(th)) of 2.5V at 250µA. It is housed in an 8-DFN (5x6) package, suitable for surface mounting.
This device is suitable for applications requiring robust power handling and low on-state resistance. Its surface mount package facilitates integration into compact PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the AON6408L is 30V.
The continuous drain current (Id) for the AON6408L is 14.5A at 25°C ambient temperature and 25A at 25°C case temperature.
The maximum on-resistance (Rds On) for the AON6408L is 6.5 mOhm when measured at 20A drain current and 10V gate-source voltage.
The AON6408L MOSFET is supplied in an 8-DFN (5x6) package suitable for surface mounting.
The Moisture Sensitivity Level (MSL) for the AON6408L is 1 Unlimited.