| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,340 pcs
|
1340 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The AON6403 is a 30V P-Channel MOSFET manufactured by Alpha and Omega Semiconductor (AOS). It utilizes advanced trench MOSFET technology combined with a low-resistance package to achieve extremely low RDS(ON) values, as low as 3.1mΩ at VGS = -10V and 4.3mΩ at VGS = -4.5V.
This MOSFET is rated for a continuous drain current of -85A at 25°C (TC) and a maximum power dissipation of 83W at 25°C (TA). The junction temperature range is from -55°C to 150°C.
Key electrical characteristics include a Drain-Source Breakdown Voltage (BVDSS) of -30V and a Gate-Source Voltage (VGS) range of ±20V. The device features various capacitance values such as Ciss (Input Capacitance) up to 9120pF, Coss (Output Capacitance) up to 1720pF, and Crss (Reverse Transfer Capacitance) up to 1470pF.
The AON6403 is supplied in a DFN5x6-8L surface mount package. It is suitable for applications such as load switching and battery protection.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage (BVDSS) for the AON6403 is -30V.
The maximum continuous drain current (ID) for the AON6403 is -85A at 25°C (TC).
The typical Gate Threshold Voltage (VGS(th)) for the AON6403 is -1.7V.
The AON6403 is supplied in a DFN5x6-8L surface mount package.
The RoHS status of the AON6403 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the AON6403 is 1 Unlimited.