| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,683 pcs
|
9683 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
3,238 pcs
|
3238 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
490 pcs
|
490 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel |
The AOS AON6290 is a 100V N-Channel MOSFET utilizing trench MOSFET technology optimized for efficient high-frequency switching. It minimizes conduction and switching power losses with a low combination of RDS(ON), Ciss, and Coss.
Key electrical specifications include a Drain-Source Voltage (VDS) of 100V, a maximum Gate-Source Voltage (VGS) of ±20V, and a continuous drain current (ID) of 85A at 25°C (TC). The on-resistance (RDS(ON)) is as low as 4.6mΩ at VGS=10V and 6.2mΩ at VGS=6V. It also features a typical total gate charge (Qg) of 63nC at 10V.
This MOSFET is ideal for applications such as boost converters and synchronous rectifiers in consumer, telecom, and industrial power supplies, as well as LED backlighting. It comes in a DFN5x6-8L surface-mount package.
Thermal characteristics include a maximum junction-to-case thermal resistance of 0.6°C/W and a maximum junction-to-ambient thermal resistance of 17°C/W. The operating junction and storage temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 100V.
The continuous drain current (Id) is 85A at TA=25°C and 83A at TC=25°C.
The maximum on-resistance is 4.6mΩ at VGS=10V and 6.2mΩ at VGS=6V.
The AON6290 is housed in a DFN5x6-8L surface-mount package.
The junction temperature range is -55°C to 150°C.
The gate threshold voltage (Vgs(th)) is typically 2.8V at TJ=25°C, with a minimum of 2.2V and a maximum of 3.4V.
The total gate charge (Qg) is typically 63nC at VGS=10V and 28.5nC at VGS=4.5V.