| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,600 pcs
|
6600 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
278 pcs
|
278 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Tape & Reel |
The AON6268 from AOS is an N-Channel Power MOSFET designed with Trench Power AlphaSGT technology. It offers a low on-resistance of less than 4.7mΩ at VGS=10V and 6.3mΩ at VGS=4.5V, making it suitable for efficient power switching applications.
Key electrical characteristics include a drain-source breakdown voltage of 60V and a continuous drain current of up to 72A at 25°C ambient temperature. The device also features a low gate charge and fast switching times, with turn-on delay of 7.5ns and turn-off delay of 38ns.
Packaged in a DFN 5x6 footprint, the AON6268 is designed for surface mounting. It is tested for 100% UIS and Rg, indicating robust performance under avalanche and gate resistance conditions. Applications include synchronous rectification for AC-DC quick chargers.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AON6268 is packaged in a DFN 5x6 surface-mount package.
The operating temperature range is -55°C to 150°C.
The minimum drain-source breakdown voltage is 60V.
The maximum continuous drain current is 72A at 25°C ambient temperature.
The maximum on-resistance at 10V gate voltage and 20A drain current is 4.7mΩ.
The typical total gate charge at 10V gate voltage and 20A drain current is 44nC.
The typical junction-to-case thermal resistance is 1.8°C/W.