AON6262E N-Channel MOSFET with 60V drain-source breakdown voltage and 40A continuous drain current. Features low on-resistance of 6.2mΩ at 10V gate drive.
Mfr Part #:

AON6262E

Available from 1 distributors
Mfr Name: Alpha&Omega Semicondu Ctor
Alpha&Omega Semicondu Ctor
N-Channel MOSFET with 60V drain-source breakdown voltage and 40A continuous drain current. Features low on-resistance of 6.2mΩ at 10V gate drive.
✓ Total Stock: 6,394 pcs
$ Price Range: $0.46 - $1.91

AON6262E Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,394 pcs
6394 pcs On Request 1 On Request On Request 21+ On Request On Request

AON6262E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

AON6262E Description

Short technical summary and product information.

The AON6262E is an N-Channel MOSFET from Alpha & Omega Semiconductor, designed for high efficiency power supply and secondary synchronous rectifier applications. It features a drain-source breakdown voltage of 60V and a continuous drain current of 40A at 25°C case temperature. The device offers low on-resistance: 6.2mΩ maximum at Vgs=10V and 8.5mΩ maximum at Vgs=4.5V, with typical values of 4.8mΩ and 6.2mΩ respectively.

 

Key electrical characteristics include a gate threshold voltage of 1.2V to 2.2V, total gate charge of 45nC maximum at Vgs=10V, and input capacitance of 1650pF typical. Switching performance is optimized with typical turn-on delay of 6ns, rise time of 5ns, turn-off delay of 29ns, and fall time of 7ns. The device is ESD protected with HBM Class 2 and is 100% UIS and Rg tested, with an avalanche energy rating of 79mJ.

 

The MOSFET is housed in an 8-DFN (5x6) surface mount package with flat leads, supporting a junction temperature range of -55°C to 150°C. Maximum power dissipation is 48W at 25°C case temperature. Thermal resistance junction-to-case is 2.6°C/W maximum, and junction-to-ambient is 50°C/W maximum. The device is supplied in tape and reel packaging with a minimum order quantity of 3000 pieces.

AON6262E Quick Information

Product Type: MOSFET
Canonical Name: AON6262E N-Channel MOSFET 60V 40A
Subcategory: Single

AON6262E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

AON6262E Estimated Pricing

Qty Low High
1+ $1.91 $1.91
10+ $1.21 $1.21
50+ $0.91 $0.91
100+ $0.81 $0.81
500+ $0.64 $0.64
3,000+ $0.52 $0.52
9,000+ $0.46 $0.46

Estimated market price range - modelled values for guidance only, not live distributor offers.

AON6262E Features

  • 60V drain-source breakdown voltage.
  • 40A continuous drain current at 25°C.
  • Low on-resistance: 6.2mΩ at 10V.
  • ESD protected with HBM Class 2.
  • 100% UIS and Rg tested.

AON6262E Applications

  • Ideal for high efficiency power supplies.
  • Used in secondary synchronous rectifier circuits.
  • Suitable for DC-DC converters and motor drives.

AON6262E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the AON6262E?

The drain-source breakdown voltage is 60V minimum.

What is the maximum continuous drain current?

The continuous drain current is 40A at Tc=25°C.

What is the on-resistance at 10V gate drive?

The maximum on-resistance is 6.2mΩ at Vgs=10V, Id=20A; typical is 4.8mΩ.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

What package is the AON6262E available in?

It is available in an 8-DFN (5x6) surface mount package with flat leads.

Is the AON6262E RoHS compliant?

The RoHS status is listed as RoHS3 Compliant but is unverified.

What is the gate threshold voltage?

The gate threshold voltage is 1.2V to 2.2V maximum at Vds=Vgs, Id=250µA.

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