| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,210 pcs
|
2210 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Rds On (Max) @ Id, Vgs |
The AON6206 from Alpha & Omega Semiconductor Inc. is a high-performance N-Channel MOSFET. It is designed for various power management applications requiring efficient switching.
Key electrical characteristics include a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 24A at 25°C. The on-resistance (Rds On) is specified as a maximum of 6.5 mOhm at 20A and 10V gate-source voltage, indicating low conduction losses.
This MOSFET features a logic level gate, making it suitable for direct interface with microcontrollers and low-voltage control circuits. The typical gate charge (Qg) is 23.5nC at 10V, and the input capacitance (Ciss) is 1670pF at 15V.
The AON6206 is housed in an 8-DFN-EP (5x6) package and is designed for surface mounting. Its maximum power dissipation is rated at 4.2W. This component is ideal for applications where space efficiency and robust performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the AON6206 MOSFET is 30V.
The continuous drain current (Id) of the AON6206 at 25°C is 24A.
The maximum Rds On for the AON6206 MOSFET is 6.5 mOhm at 20A drain current and 10V gate-source voltage.
The AON6206 MOSFET is in an 8-DFN-EP (5x6) package.
The AON6206 MOSFET is designed for surface mounting.