| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,494 pcs
|
4494 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present | |
| Tape & Reel |
The AON6160 is an N-Channel MOSFET manufactured by Alpha and Omega Semiconductor (AOS). It utilizes Trench Power AlphaSGT technology, offering low on-resistance and low gate charge, making it optimized for fast-switching applications.
Key electrical specifications include a Drain-Source Breakdown Voltage (BVDSS) of 60V and a maximum Static Drain-Source On-Resistance (RDS(ON)) of 1.58mΩ at a gate-source voltage (VGS) of 10V. The continuous drain current (ID) is rated at 100A at 25°C. The gate threshold voltage (VGS(th)) typically ranges from 2.1V to 3.4V.
This MOSFET is designed for applications such as synchronous rectification in DC/DC and AC/DC converters, as well as industrial and motor drive applications. It is built with AlphaSGT technology and is RoHS and Halogen-Free compliant.
The AON6160 is available in a DFN5x6 package, suitable for surface mounting. It is supplied in tape and reel packaging with a minimum order quantity of 3000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AON6160 has a maximum Drain-Source Breakdown Voltage (BVDSS) of 60V.
The typical Gate Threshold Voltage (VGS(th)) for the AON6160 is 2.55V.
The maximum On-Resistance (RDS(ON)) for the AON6160 at 10V VGS is 1.58mΩ.
The AON6160 has a continuous drain current rating of 100A at 25°C.
The operating junction and storage temperature range for the AON6160 is -55°C to 150°C.
The AON6160 is supplied in a DFN5x6 package.
The AON6160 is RoHS3 Compliant.