| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,226 pcs
|
6226 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Tape & Reel |
The AON6156 from AOS is a high-performance N-Channel MOSFET built using Trench Power MV MOSFET technology. It offers low on-resistance and low gate charge, making it optimized for fast-switching applications.
Key electrical characteristics include a 45V Drain-Source Breakdown Voltage (BVDSS) and a low Static Drain-Source On-Resistance (RDS(ON)) of less than 2.6mΩ at VGS=10V and less than 4mΩ at VGS=4.5V. The total gate charge (Qg) is typically 70nC at VGS=10V, contributing to its efficient switching performance.
This MOSFET is suitable for applications such as synchronous rectification in DC/DC and AC/DC converters, as well as industrial and motor drive applications. It is supplied in a DFN5x6 surface-mount package and is available on tape and reel with a standard package quantity of 3000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AON6156 has a minimum Drain-Source Breakdown Voltage of 45V.
The typical Gate Threshold Voltage (VGS(th)) for the AON6156 is 1.9V, with a range of 1.5V to 2.5V.
The typical Static Drain-Source On-Resistance (RDS(ON)) for the AON6156 at VGS=10V is less than 2.6mΩ.
The typical Total Gate Charge (Qg) for the AON6156 at VGS=10V is 70nC.
The AON6156 is supplied in a DFN5x6 package.
The standard package quantity for the AON6156 is 3000 units.