| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,570 pcs
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1570 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AON5802BL is a dual N-channel MOSFET array from Alpha & Omega Semiconductor, configured as two N-channel common-drain MOSFETs in a single 6-DFN package. It is rated for a drain-source voltage of 30V and a continuous drain current of 7.2A at 25°C, with a maximum on-resistance of 19mOhm at 7A and 4.5V gate drive.
This device features a maximum gate charge of 24nC at 10V and an input capacitance of 1150pF at 15V, enabling efficient switching in low-voltage applications. The maximum gate threshold voltage is 1.5V at 250µA, making it suitable for logic-level drive circuits.
The AON5802BL is housed in a 6-WFDFN exposed pad package (supplier device package 6-DFN-EP 2x5) and supports surface-mount assembly. It operates over a junction temperature range of -55°C to 150°C and can dissipate up to 1.6W of power.
This dual MOSFET array is designed for space-constrained designs where two independent N-channel switches are needed, such as load switching, power management, and DC-DC converter applications. The common-drain configuration allows for efficient use in synchronous rectification and other dual-switch topologies.
The AON5802BL has a drain-source voltage (Vdss) rating of 30V.
The continuous drain current (Id) is 7.2A at 25°C (Tc).
The maximum on-resistance (Rds On) is 19mOhm at 7A and 4.5V gate-source voltage.
The operating temperature range is -55°C to 150°C (junction temperature).
The AON5802BL is available in a 6-WFDFN exposed pad package (supplier device package 6-DFN-EP 2x5) for surface-mount mounting.
The AON5802BL is marked as RoHS3 compliant, though this status is unverified.
The moisture sensitivity level (MSL) is 1 (unlimited), verified from the datasheet.