| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,000 pcs
|
17000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
2,260 pcs
|
2260 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| SVHC Present | |
| Tape & Reel |
The AOS AON3818 is a 24V dual N-channel MOSFET designed with Trench Power αMOS LV technology. It offers low on-resistance (RDS(ON)) and low gate charge, making it efficient for power management applications.
Key electrical characteristics include a Drain-Source Voltage (VDS) of 24V, a continuous Drain Current (ID) of 8A at 25°C, and a maximum Power Dissipation (PD) of 2.7W at 25°C. The on-resistance is specified as less than 13.5mΩ at VGS=4.5V and ID=8A, and less than 21mΩ at VGS=2.5V and ID=4A. The total gate charge (Qg) is typically 9.5nC.
This MOSFET is housed in a compact DFN3x3A-8L surface-mount package. It is suitable for applications such as battery protection switches and mobile device battery charging and discharging.
The device also features ESD protection and is RoHS and Halogen-Free compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the AON3818 is 24V.
The typical Gate Threshold Voltage (VGS(th)) for the AON3818 is 0.8V.
The maximum Drain-Source On-Resistance (Rds(on)) at VGS=4.5V is 13.5mΩ.
The continuous Drain Current (ID) at 25°C is 8A.
The typical total Gate Charge (Qg) for the AON3818 is 9.5nC.
The operating junction temperature range for the AON3818 is -55°C to 150°C.
The AON3818 is supplied in a DFN3x3A-8L package.