| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,650 pcs
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4650 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request |
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The AOS AON3816 is a 20V Dual N-Channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) performance, with values as low as <22mΩ at VGS=4.5V and <28mΩ at VGS=2.5V. This device is suitable for various load switch applications due to its common-drain configuration and ESD protection.
Key electrical characteristics include a continuous drain current of 4A at 25°C and a maximum power dissipation of 2.5W at 25°C. The MOSFET operates with a gate-source voltage rating of ±12V and features a drain-source breakdown voltage of 20V.
Packaged in a DFN3x3A-8L surface-mount package, the AON3816 is designed for applications requiring high power density and efficient thermal management. Its advanced trench technology ensures low gate charge and reliable operation across a range of gate voltages.
Applications for the AON3816 include automotive, cloud computing, consumer electronics, and industrial power supplies, motor drives, and power tools.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (BVDSS) for the AON3816 is 20V.
The AON3816 has a typical continuous drain current of 4A at 25°C (TC=25° C).
The typical static drain-source on-resistance (RDS(ON)) for the AON3816 at VGS=4.5V and ID=4A is less than 22mΩ.
The AON3816 is available in a DFN3x3A-8L package.
The RoHS status of the AON3816 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the AON3816 is 1 Unlimited.
The operating temperature range for the AON3816 is -55°C to 150°C.