| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,675 pcs
|
2675 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| FET Type | |
| Gate Charge | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Rds On (Max) @ Id, Vgs | |
| Tape & Reel | |
| Technology |
The AOS AON2701 is a P-Channel MOSFET with a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 3A at 25°C. Its on-resistance (Rds On) is a maximum of 120mOhm at 3A and 4.5V gate-source voltage. The gate charge (Qg) is a maximum of 6.5 nC at 4.5V, and the input capacitance (Ciss) is a maximum of 700 pF at 10V.
This MOSFET has a maximum power dissipation of 1.5W and an operating temperature range of -55°C to 150°C. It is designed with a Schottky diode feature for isolation. The device is suitable for surface mount applications and comes in a 6-DFN-EP (2x2) package, supplied on tape and reel.
The AON2701 is an alternative to the AOS AON2701, offering similar specifications for replacement or new designs. Its electrical characteristics make it suitable for general-purpose switching applications where a P-channel enhancement mode MOSFET is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
3A at 25°C.
120mOhm maximum at 3A and 4.5V.
6.5nC maximum at 4.5V.
700pF maximum at 10V.
-55°C to 150°C junction.
6-WDFN-EP (2x2) surface mount.