| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,214 pcs
|
2214 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
160 pcs
|
160 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Tape & Reel |
The AOS AON2290 is a 100V N-Channel MOSFET utilizing advanced trench technology for low on-resistance. It is suitable for load switch and battery protection applications.
Key electrical characteristics include a maximum continuous drain current of 4.5A at 25°C and a drain-source voltage of 100V. The on-resistance is specified as less than 72mΩ at VGS=10V and less than 97mΩ at VGS=4.5V. The gate threshold voltage typically sits at 2.3V.
This MOSFET is housed in a compact DFN2x2B package, designed for surface mounting. The package offers good thermal performance with a maximum junction-to-ambient thermal resistance of 66°C/W at 25°C ambient temperature.
With its robust specifications and efficient packaging, the AON2290 is a reliable choice for power management in various electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The maximum continuous drain current at 25°C is 4.5A.
The typical gate threshold voltage is 2.3V.
The maximum on-resistance at VGS=10V is 72mΩ.
The AON2290 is available in a DFN2x2B package.
The standard package quantity is 3000 units.